PART |
Description |
Maker |
LEXLTN2S0001 LNA4905L08 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
LN184 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
LNA4801L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
OLD2210 |
GaAlAs Infrared Light Emitting Diode(砷化稼红外线发光二极
|
OKI SEMICONDUCTOR CO., LTD.
|
OLD232-2 |
GaAlAs Infrared Light Emitting Diode(砷化稼红外线发光二极
|
OKI SEMICONDUCTOR CO., LTD.
|
TSHA520. TSHA5202 TSHA5201 TSHA5200 TSHA520 TSHA52 |
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package From old datasheet system GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package GaAlAs Infrared Emitting Diodes in 酶 5 mm (T-13/4) Package GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
|
VISAY[Vishay Siliconix] TFUNK[Vishay Telefunken] Vishay Intertechnology,Inc.
|
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies Optek Technology
|
VTE1295 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|